Abstract: We present a comprehensive benchmarking framework for one transistor-one capacitor (1T1C) low-voltage ferroelectric random access memory (FeRAM) circuits. We focus on the most promising ...

为了降低云和边缘的功耗，兼具高性能和非易失性的新型存储器正迎来市场快速增长的发展大时代，如铁电存储器FeRAM和ReRAM，以及磁性存储器MRAM ...