“The demonstrated performance of single-junction GaAs photovoltaic cells on porosified 100 mm Ge wafers not only matches but surpasses state-of-the-art GaAs solar cells fabricated on detachable ...

A research team from Germany's Fraunhofer ISE and France's Centre for Nanoscience and Nanotechnology (C2N) claim to have developed an ultra-thin solar cell based on Gallium arsenide (GaAs), which ...

A paper recently published in the journal Symmetry demonstrated improvements in indium arsenide/gallium arsenide (InAs/GaAs) quantum dot(QD) intermediate band solar cells’(IBSC) characteristics ...