In a two-tier 3D NAND structure, the upper and lower channel hole profile can be different, and this combination of different profiles leads to different top-down visible areas. The visible area is ...
该技术允许在更低温的环境下进行蚀刻,从而使存储器的存储单元间的存储通孔(memory hole)以更快 ... 制造400层以上堆叠的3D NAND闪存芯片。